PHOTOCONDUCTIVITY OF AMORPHOUS Sb2Se3 AND Sb2Se3:Sn THIN FILMS
نویسندگان
چکیده
The steady-state photocurrent spectra of Sb2Se3 and Sb2Se3: Sn films in the photon energies ranged from 1 to 2.5 eV for different values of electric field intensity and temperatures were investigated. In the photocurrent spectra the peak near 1.5 eV, caused by the defect band, was revealed. For the amorphous Sb2Se3 thin film samples with tin impurity the intensity of this band is higher. In the interval of relaxation times from 0.1 to 10 s the negative photocurrent under incident light pulse with wavelength from the region of fundamental absorption was detected. The comparative analyses of the experimental data, based on the model of charged defects, clear up the discovered influence of tin impurity on the photosensitivity of investigated amorphous films.
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